--- 產(chǎn)品參數(shù) ---
- 類型 N溝道
- 最大耐壓 60V
- 最大電流 45A
- 導(dǎo)通電阻 24mΩ@10V, 28mΩ@4.5V
- 門源電壓 20Vgs (±V)
- 門閾電壓 1.8Vth
- 封裝 TO252
--- 數(shù)據(jù)手冊(cè) ---
--- 產(chǎn)品詳情 ---
型號(hào) ME35N06G絲印 VBE1638品牌 VBsemi詳細(xì)參數(shù)說明 類型 N溝道MOSFET 最大耐壓 60V 最大電流 45A 導(dǎo)通電阻 24mΩ@10V, 28mΩ@4.5V 門源電壓 20Vgs (±V) 門閾電壓 1.8Vth 封裝 TO252應(yīng)用簡(jiǎn)介 ME35N06G是一款N溝道MOSFET,適用于高電壓和大電流的應(yīng)用。其最大耐壓為60V,最大電流為45A,具有低導(dǎo)通電阻和高性能。該器件適用于多個(gè)領(lǐng)域的模塊設(shè)計(jì),主要包括 1. 電源管理模塊 適用于高壓電源開關(guān)和DCDC變換器等。2. 電機(jī)驅(qū)動(dòng)模塊 可用于驅(qū)動(dòng)大功率電機(jī)和機(jī)器人控制系統(tǒng)。3. 高功率逆變器模塊 適用于太陽能逆變器、UPS電源等高功率逆變器??傊琈E35N06G適用于高電壓和大電流應(yīng)用領(lǐng)域的模塊設(shè)計(jì),包括電源管理、電機(jī)驅(qū)動(dòng)和高功率逆變器模塊等。
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