--- 產(chǎn)品參數(shù) ---
- 頻道類型 N溝道
- 額定電壓 30V
- 額定電流 180A
- RDS(ON) 2mΩ @ 10V,2.8mΩ @ 4.5V
- 門源電壓范圍 20V
- 門源閾值電壓 1.7V
- 封裝類型 TO220
--- 數(shù)據(jù)手冊(cè) ---
--- 產(chǎn)品詳情 ---
型號(hào) MTB1D7N03E3絲印 VBM1302品牌 VBsemi參數(shù) 頻道類型 N溝道 額定電壓 30V 額定電流 180A RDS(ON) 2mΩ @ 10V,2.8mΩ @ 4.5V 門源電壓范圍 20V 門源閾值電壓 1.7V 封裝類型 TO220應(yīng)用簡(jiǎn)介 MTB1D7N03E3(絲印 VBM1302)是VBsemi公司生產(chǎn)的一款N溝道功率MOSFET。以下是詳細(xì)的參數(shù)說(shuō)明和應(yīng)用簡(jiǎn)介 詳細(xì)參數(shù)說(shuō)明 MTB1D7N03E3是一款N溝道功率MOSFET,具有高電壓和大電流承載能力。主要參數(shù)包括額定電壓為30V,額定電流為180A,RDS(ON)為2mΩ @ 10V,2.8mΩ @ 4.5V,門源電壓范圍為20V,門源閾值電壓為1.7V,封裝類型為TO220。應(yīng)用領(lǐng)域 MTB1D7N03E3(VBM1302)適用于多種領(lǐng)域和應(yīng)用場(chǎng)景,主要用于需要N溝道功率MOSFET的高電壓和大電流承載能力的電路。以下是一些典型的應(yīng)用領(lǐng)域 1. 電源管理模塊 MTB1D7N03E3可用于電源管理模塊中,提供高效的電能轉(zhuǎn)換和穩(wěn)定的電流輸出,改善系統(tǒng)的功耗和效率。2. 電機(jī)驅(qū)動(dòng) 它可應(yīng)用于電機(jī)驅(qū)動(dòng)電路中,提供高功率和高效能的電力輸出,適用于工業(yè)自動(dòng)化和機(jī)械設(shè)備中的電機(jī)驅(qū)動(dòng)。3. 汽車電子系統(tǒng) MTB1D7N03E3適用于汽車電子系統(tǒng)中的電源管理、電機(jī)驅(qū)動(dòng)和照明控制等方面,滿足汽車電子系統(tǒng)對(duì)高電壓和高功率的要求。綜上所述,MTB1D7N03E3(VBM1302)是一款N溝道功率MOSFET,適用于電源管理模塊、電機(jī)驅(qū)動(dòng)和汽車電子系統(tǒng)等領(lǐng)域模塊。它具有高電壓和大電流承載能力,適用于需要高功率和高效能的電路。
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