IC GATE DRVR HALF-BRIDGE 8SOIC
Renesas Electronics
驅(qū)動配置:半橋;負(fù)載類型:MOSFET;IGBT;電源電壓:10V~20V;峰值灌電流:500mA;峰值拉電流:250mA;
ON Semiconductor
IC GATE DRVR LOW-SIDE 8SOIC
Texas Instruments (TI)
For new designs, we recommend IRS2153D, PDIP8, RoHS
Infineon
IC GATE DRVR LOW-SIDE 8SOIC
Infineon
IC GATE DRVR HIGH-SIDE 8DIP
Infineon
IC GATE DRVR HALF-BRIDGE 10WSON
Texas Instruments (TI)
MOSFET DRVR 4A 4-OUT Hi/Lo Side Inv/Non-Inv 14-Pin SOIC N
Renesas Electronics
IC GATE DRVR LOW-SIDE 8SOIC
Littelfuse
IC GATE DRVR HALF-BRIDGE 8SOIC
Renesas Electronics