P channel drain-source voltage (Vdss) : 30V Continuous drain current (Id) : 50mA Power (Pd) : 300mW
NXP Semiconductors
2N channel +2P channel VDS1=30V ID1=5.5A VDS2=-30V ID2=-4.1A VGS=±20V P=1.38W 4 channel
Trinamic
N channel +P channel VDS1=60V ID1=6.6A VDS2=-60V ID2=-4.7A VGS=±20V P=3.13W channel 2
Trinamic
N channel +P channel VDS1=30V ID1=7.3A VDS2=-30V ID2=-5.3A VGS=±20V P=2.5W channel 2
Trinamic
單 FET，MOSFET N 通道 MOSFET（金屬氧化物） 60 V 1.7A（Ta） 6V，10V 100 毫歐 @ 1.7A，10V 3V @ 250μA 10 nC @ 10 V
ON Semiconductor
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