--- 產(chǎn)品參數(shù) ---
- 溝道 N溝道
- 封裝 TO263封裝
--- 數(shù)據(jù)手冊(cè) ---
--- 產(chǎn)品詳情 ---
**STB80NF10T4-VB 詳細(xì)參數(shù)說(shuō)明和應(yīng)用簡(jiǎn)介:**
- **參數(shù):**
- 絲?。篤BL1101N
- 品牌:VBsemi
- 封裝:TO263
- 類(lèi)型:N—Channel溝道
- 額定電壓:100V
- 額定電流:100A
- RDS(ON):10mΩ @ VGS=10V, 20V
- 閾值電壓:3V

- **應(yīng)用簡(jiǎn)介:**
- STB80NF10T4-VB是一款N溝道場(chǎng)效應(yīng)晶體管(MOSFET),適用于高功率開(kāi)關(guān)和電源控制。
- **應(yīng)用領(lǐng)域:**
- 高功率開(kāi)關(guān)模塊
- 電源控制模塊
- **作用:**
- 在高功率開(kāi)關(guān)模塊中,用于控制電路的導(dǎo)通和切斷,適用于高功率設(shè)備。
- 在電源控制模塊中,用于實(shí)現(xiàn)電源的高效開(kāi)關(guān)和調(diào)節(jié),適用于大功率電子設(shè)備。
- **使用注意事項(xiàng):**
- 絲印VBL1101N對(duì)應(yīng)STB80NF10T4-VB,確保正確識(shí)別。
- 在規(guī)定的電壓和電流范圍內(nèi)使用,以防損壞設(shè)備。
- 遵循制造商提供的電路設(shè)計(jì)和應(yīng)用建議。
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