FRAM芯片擴展在低功率應用中的耐力

　　雖然EEPROM和FLASH通常被用于非易失性存儲器的首選（NVM）在大多數(shù)應用中，鐵電存儲器（FRAM）為能量收集應用如無線傳感器節(jié)點，智能電表的許多低功耗設計獨特的優(yōu)勢，和其他數(shù)據(jù)采集設計。其擴展的讀寫周期和數(shù)據(jù)保留時間，F(xiàn)RAM技術可以幫助設計人員滿足要求使用十年，F(xiàn)RAM芯片低功耗運行框架基于MCU的NVM制造商包括Cypress半導體、富士通半導體、羅姆半導體、德克薩斯文書。

　　傳統(tǒng)的NVMs，如FLASH和EEPROM，在浮柵中的電荷泵，需要提高電壓的需要迫使運營商通過柵氧化層的水平電荷載體的形式存儲數(shù)據(jù)。其結果是，隨著長期寫入延遲和高功率消耗在這些設備中固有的，其高電壓寫操作可以最終磨損細胞-有時在只有10000個寫周期。

　　FRAM advantages

　　In contrast， Ferroelectric RAM （FRAM） stores data by means of the polarization of the ferroelectric material lead zirconate titanate， or PZT （Pb （ZrTi）O3）， which is placed as a film between two electrodes similar to the structure of a capacitor. As with a DRAM， each bit in a FRAM array is read and written individually， but while DRAM uses a transistor and capacitor to store the bit， FRAM uses a dipole shift in the crystalline structure for the corresponding bit caused by application of an electric field across the electrodes （Figure 1）。 Because this polarization remains after the electric field is removed， the FRAM data persists indefinitely even without available power – a vital capability for designs powered by uncertain ambient sources.