Shifting the Balance of Power

　　飛思卡爾的低功耗技術(shù)，推動?Kinetis ARM皮質(zhì)?- M4 MCU。

　　嵌入式市場對功耗低的性能的需求越來越大，現(xiàn)在已經(jīng)擴展到便攜式和墻壁供電的應(yīng)用范圍。為了滿足這一需求，飛思卡爾繼續(xù)推動低功耗設(shè)計的邊界。最新的受益人是其新的Kinetis微控制器ARM Cortex-M4線。在2010第四季度采樣，Kinetis是第一個廣泛的市場的混合信號單片機組合基礎(chǔ)上的新的ARM Cortex-M4內(nèi)核的工業(yè)中最可擴展的ARM Cortex-M4 MCU組合之一。多個硬件和軟件兼容的單片機的家庭將提供卓越的性能，內(nèi)存和功能可擴展性從50 MHz，超小型QFN封裝32 KB的閃存設(shè)備，高達150 MHz的設(shè)備與閃存和豐富的工業(yè)集中周邊集1 MB。低功耗的Kinetis MCU的設(shè)計中發(fā)揮了核心作用。這反映在新的飛思卡爾90 nm分柵薄膜存儲器的使用（sg-tfs）工藝技術(shù)，并在廣泛的通用和專用外設(shè)，來包裝與省電功能。

　　Innovative low-power process technology

　　Process technology is the basic building block of any semiconductor product and a key factor in determining an MCU‘s power consumption. Kinetis MCUs are the first to take advantage of Freescale’s SG-TFS flash technology which， in addition to offering extremely fast access times and high immunity to charge loss， has been specifically designed to address the needs of power-sensitive applications. In designing the SG-TFS bit cell， Freescale has utilized fast， low voltage transistors in the read path resulting in a lower operating voltage range of 1.71 V to 3.6 V. In applications that utilize two 1.5 V batteries， cell life deteriorates rapidly once the 0.9 V level is reached. This means that the 1.71 V lower voltage limit translates into extended battery life versus traditional MCUs that are typically limited to 2 V or above. This extended voltage range applies not only to the on-chip memories — flash， SRAM and Freescale‘s new FlexMemory （configurable， high endurance EEPROM） — but also to the analog peripherals， thereby allowing continual signal measuring and conditioning even at the lower end of the power curve. The voltage characteristics of TFS also contribute to reduced run currents by allowing signals that are switched at high speed to operate at lower voltages （typically 1.2 V）。 Because run current is proportional to C*V^2*f， the reduction in V is very beneficial to the flash component of the active current.