用Jazz 0.35μm SiGe BiCMOS 工藝設計了一個寬帶、高線性和增益可調的功率驅動放
大器。放大器采用兩級級聯(lián)結構，第一級采用差分結構，雙端輸入單端輸出，第二級采用單端輸入單端輸出的共發(fā)射極放大結構，在3.3V 電源電壓下，放大器帶寬達到0.82~2.2GHz，高增益模式下放大器小信號增益為29.7±1.3dB，低增益模式下小信號增益為19.7±0.9dB，輸出1dB 壓縮點大于13.7dBm，總的直流電流小于20 mA。
關鍵詞： 功率驅動放大器；SiGe BiCMOS; 寬帶；1dB 壓縮點
0.82~2.2GHz High Linear Pre-Power Amplifier Design
Yu Weiwei1, 2 , Li Zhiqun1
(1 Institute of RF- & OE-ICs, 2 College of Integrated Circuits, Southeast University; Nanjing China; 210096)
Abstract: A high linearity broadband power amplifier driver with tunable power gain is realized in
Jazz 0.35μm SiGe BiCMOS technology. The amplifier adopt two-stage cascade amplifier
structure , first stage adopt differential structure with differential inputs and single-ended outputs ,
the second stage adopt common-emitter structure with single-ended inputs and single-ended
outputs. The amplifier works from 0.82GHz to 2.2GHz with a single 3.3V power supply. The
amplifier small signal gain from 0.82GHz to 2.2GHz is 29.7±1.3dB in high gain mode and is
19.7±0.9dB in low gain mode. With simple temperature-insensitive bias, the total current is less
than 20 mA. The output 1dB compression points are greater than 13.7dBm from 0.82GHz to
2.2GHz both in high gain mode and in low gain mode.
Key words: power amplifier; SiGe BiCMOS; broad band; 1dB compression point