GaN Captures the Spotlight at IMS2012

　　今年的國際微波研討會(huì)（ims2012）是在蒙特利爾é基地，在魁北克的Palais des Congres舉行，加拿大。超過7600名微波及射頻設(shè)計(jì)師、研究人員、發(fā)展商、學(xué)術(shù)界人士、行政人員及展覽人員出席了會(huì)議。收到了來自49個(gè)不同國家的1225份文件提交的記錄，該活動(dòng)歡迎來自21個(gè)國家的569個(gè)參展商，展示了他們的產(chǎn)品和技術(shù)。

　　在今年的ims2012，GaN有技術(shù)更高的重視與ims2011。企業(yè)之間呈現(xiàn)出GaN產(chǎn)品首次被飛思卡爾，這是已知的最主要的是它的LDMOS射頻部分。與會(huì)者看到基于GaN的開關(guān)和LNAs，和測試工具進(jìn)行建模，分別針對大功率GaN器件。盡管GaN由于其性能優(yōu)勢而被公認(rèn)為是許多射頻應(yīng)用中引人注目的硅替代品，但它面臨著與成本相關(guān)的重大挑戰(zhàn)。推高價(jià)格的公司將隨著生產(chǎn)量的增長和技術(shù)適應(yīng)更多的應(yīng)用而下降。

　　以下是在研討會(huì)技術(shù)會(huì)議期間發(fā)表的一些重要的贛文相關(guān)論文的樣本：

　　Sumitomo Electric Device Innovations （Yamanashi-Plant， Japan） presented a paper titled ‘A 2.6 GHz band 537 W peak power GaN HEMT asymmetric Doherty amplifier with 48 percent drain efficiency at 7 dB’。 Currently， Doherty amplifiers are used in basestation transmitter system （BTS） since the peak-to-average power ratio of modern digital wireless communication signals， like W-CDMA， LTE and WiMAX， is around 6 to 8 dB. Additionally， Doherty amplifiers are suitable to operate in such back-off output power regions. Si-LDMOS transistors have been the dominant technology for BTS applications because of their price/performance benefits. On the other hand， GaN HEMT features high output impedance and operates with high power and high efficiency due to its high current density and high breakdown voltage. Industry analysts see GaN-HEMT gradually penetrating the high frequency BTS market.