基于單粒子輻照的等離子體輸運(yùn)機(jī)理，提出了橫向高壓DMOS單粒子輻照的瞬態(tài)響應(yīng)模型。借助對橫向高壓DMOS的關(guān)態(tài)和開態(tài)的不同能量粒子輻照瞬態(tài)響應(yīng)的二維數(shù)值分析，獲得了橫向高壓DMOS在雙結(jié)、單結(jié)和無結(jié)情況下的瞬態(tài)響應(yīng)特性。其計算結(jié)果表明，橫向高壓DMOS的開態(tài)漏端峰值電流比關(guān)態(tài)的漏端峰值電流小，且漏端峰值電流和峰值電流出現(xiàn)的時間隨入射粒子能量的增大而增加。
關(guān) 鍵 詞 橫向高壓DMOS; 單粒子效應(yīng); 等離子體; 瞬態(tài)響應(yīng)

Abstract Based on the transport mechanism of the single ion radiate plasma, the transient response model of single ion radiate the lateral high-voltage DMOS is proposed. The transient response characters of DMOS at non-junction, single junction and double junction are obtained by the transient response numerical analysis result of the open and close state of the DMOS at different energy ion radiation. Indicated that the peak value drain current of the turn-on state is bigger than that of the turn-off state, the peak value drain current and the arisen time of the peak value drain current are increased while the energy of the ion is increased.
Key words lateral high-voltage DMOS; single event effect; plasma; transient response